Manufacturer Part Number
IXTN17N120L
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-current N-channel MOSFET with low on-resistance for power conversion applications
Product Features and Performance
Drain-to-source voltage up to 1200V
On-resistance as low as 900 milliohms
Continuous drain current up to 15A at 25°C
Wide operating temperature range of -55°C to 150°C
High input capacitance of 8300pF
Power dissipation up to 540W
Product Advantages
Suitable for high-voltage, high-current power conversion applications
Low on-resistance reduces power losses and improves efficiency
Wide temperature range allows use in demanding environments
Key Technical Parameters
Drain-to-source voltage (Vdss): 1200V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 900 milliohms
Continuous drain current (Id): 15A
Input capacitance (Ciss): 8300pF
Power dissipation (Pd): 540W
Quality and Safety Features
RoHS3 compliant
Chassis mount package (SOT-227B)
Compatibility
Compatible with other IXTN17 series MOSFETs
Application Areas
High-voltage, high-current power conversion applications
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements or upgrades may be available within the IXTN17 series.
Key Reasons to Choose This Product
High-voltage and high-current handling capability
Low on-resistance for improved efficiency
Wide operating temperature range for use in demanding environments
Robust chassis mount package for reliable performance
Part of a well-established MOSFET series from a reputable manufacturer
