Manufacturer Part Number
IXTN170P10P
Manufacturer
IXYS Corporation
Introduction
The IXTN170P10P is a high-performance P-channel MOSFET transistor from IXYS Corporation, designed for a wide range of power electronics and industrial applications.
Product Features and Performance
170A continuous drain current (Tc)
100V drain-to-source voltage (Vdss)
12mΩ maximum on-resistance (Rds(on)) at 500mA, 10V
12600pF maximum input capacitance (Ciss) at 25V
890W maximum power dissipation (Tc)
Wide operating temperature range of -55°C to 150°C (TJ)
Product Advantages
Excellent power handling and efficiency
Low on-resistance for minimal power losses
High current capability for demanding applications
Robust design for reliable operation
Key Technical Parameters
P-channel MOSFET technology
100V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs)
12mΩ maximum on-resistance (Rds(on))
240nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
SOT-227B package for chassis mount
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Motor drives
Power supplies
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in active production
Replacement or upgrade options available from IXYS
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for minimal power losses
High current capability for demanding applications
Robust design for reliable operation
Wide operating temperature range
RoHS3 compliance for environmental considerations
