Manufacturer Part Number
IXTN210P10T
Manufacturer
IXYS Corporation
Introduction
High-performance P-channel power MOSFET with low on-resistance and fast switching for efficient power conversion applications.
Product Features and Performance
High current capability up to 210A continuous drain current at 25°C
Low on-resistance down to 7.5 milli-ohms
Fast switching with low gate charge of 740 nC
Wide operating temperature range from -55°C to 150°C
High voltage rating up to 100V drain-to-source voltage
Compatible with standard MOSFET gate drive circuits
Product Advantages
Excellent efficiency for power conversion applications
Compact and rugged package design
Reliable performance in high-temperature environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±15V
On-Resistance (Rds(on)): 7.5 milli-ohms
Continuous Drain Current (Id): 210A
Input Capacitance (Ciss): 69,500 pF
Power Dissipation (Pd): 830W
Quality and Safety Features
RoHS3 compliant
Robust SOT-227B package design
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
Switched-mode power supplies
Motor drives
Power conversion and control systems
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and readily available.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Fast switching performance for high-frequency applications
Wide operating temperature range for reliability in harsh environments
Compact and robust package design for easy integration
RoHS3 compliance for environmentally-friendly applications
