Manufacturer Part Number
IXTK90N25L2
Manufacturer
IXYS Corporation
Introduction
The IXTK90N25L2 is a high-performance N-channel power MOSFET from IXYS Corporation, designed for a wide range of power conversion and control applications.
Product Features and Performance
High drain-to-source voltage rating of 250V
Low on-state resistance of 33mΩ at 45A and 10V gate drive
Continuous drain current rating of 90A at 25°C
High input capacitance of 23,000pF at 25V
Power dissipation capability of 960W at case temperature
Product Advantages
Excellent performance and efficiency in high-power applications
Robust and reliable design for industrial and automotive use
Compatible with a wide range of control and driver circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 33mΩ @ 45A, 10V
Continuous Drain Current (Id): 90A at 25°C
Input Capacitance (Ciss): 23,000pF @ 25V
Power Dissipation (Tc): 960W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 150°C operating temperature range
Compatibility
Through-hole TO-264 (IXTK) package
Compatible with a variety of control and driver circuits
Application Areas
Power conversion and control in industrial, automotive, and other high-power applications
Inverters, converters, and motor drives
Switching power supplies and power amplifiers
Product Lifecycle
The IXTK90N25L2 is an actively supported product by IXYS Corporation. Replacement or upgrade options may be available for future design changes.
Key Reasons to Choose This Product
Excellent performance and efficiency in high-power applications
Robust and reliable design for industrial and automotive use
Wide range of technical parameters and compatibility
Proven track record and support from a reputable manufacturer
