Manufacturer Part Number
IXTH6N120
Manufacturer
IXYS Corporation
Introduction
High voltage, high power N-channel MOSFET
Product Features and Performance
Drain-source voltage up to 1200V
Continuous drain current up to 6A at 25°C
Low on-resistance of 2.6Ω at 10V gate-source voltage
Fast switching capabilities
High power dissipation of 300W at 25°C
Product Advantages
Suitable for high voltage, high power applications
Efficient power conversion and control
Reliable and durable performance
Key Technical Parameters
Drain-source voltage (Vdss): 1200V
Gate-source voltage (Vgs) max: ±20V
On-resistance (Rds(on)) max: 2.6Ω
Continuous drain current (Id) at 25°C: 6A
Input capacitance (Ciss) max: 1950pF
Power dissipation (Pd) max: 300W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Suitable for high-temperature environments up to 150°C
Compatibility
Through-hole mounting in TO-247 package
Application Areas
High-voltage, high-power industrial and automotive applications
Switch-mode power supplies
Motor drives
Inverters and converters
Product Lifecycle
Currently available
No plans for discontinuation known
Key Reasons to Choose This Product
Excellent high-voltage and high-power performance
Efficient power handling with low on-resistance
Reliable and durable operation in harsh environments
Compatibility with standard industrial and automotive applications
