Manufacturer Part Number
IXTH75N10
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power, high-frequency switching applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 100V
Continuous drain current (Id) of 75A at 25°C
On-state resistance (Rds(on)) of 20mΩ at 10V gate-to-source voltage
Input capacitance (Ciss) of 4500pF at 25V drain-to-source voltage
Power dissipation of 300W at Tc (case temperature)
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent switching performance for high-power, high-frequency applications
Low on-state resistance for high efficiency
Robust design for reliable operation
Wide operating temperature range
Key Technical Parameters
MOSFET technology
N-channel FET type
TO-247 package
10V drive voltage
Gate charge (Qg) of 260nC at 10V gate-to-source voltage
Quality and Safety Features
RoHS3 compliant
Meets relevant safety and environmental standards
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Other industrial and automotive power electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High power handling capability
Excellent switching performance for high-efficiency operation
Robust and reliable design for demanding applications
Wide operating temperature range
Compatibility with a variety of high-power, high-frequency applications
IXTH86N25TIXYSMOSFET N-CH 250V 86A TO247