Manufacturer Part Number
IXTH6N90A
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-power N-channel MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss): 900V
Continuous Drain Current (Id) @ 25°C: 6A
On-Resistance (Rds(on)) @ 3A, 10V: 1.4Ω
Input Capacitance (Ciss) @ 25V: 2600pF
Power Dissipation (Tc): 180W
Operating Temperature Range: -55°C to 150°C
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) @ 250A: 4.5V
Gate-Source Voltage (Vgs) Range: ±20V
Gate Charge (Qg) @ 10V: 130nC
Quality and Safety Features
RoHS3 Compliant
TO-247 (IXTH) package
Compatibility
Through-hole mounting
Application Areas
High-power switching circuits
Power supplies
Motor drives
Industrial equipment
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
RoHS3 compliant and through-hole mounting