Manufacturer Part Number
IXTH5N100A
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with advanced MOSFET technology for high-power applications.
Product Features and Performance
High drain to source voltage up to 1000V
Low on-resistance of 2Ω at 2.5A, 10V
Continuous drain current of 5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 130nC at 10V
Excellent reliability and ruggedness
Product Advantages
Suitable for high-power, high-voltage applications
Efficient power conversion with low conduction and switching losses
Robust design for reliable performance in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 1000V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2Ω at 2.5A, 10V
Continuous Drain Current (Id): 5A at 25°C
Input Capacitance (Ciss): 2600pF at 25V
Power Dissipation (Pd): 180W at Tc
Quality and Safety Features
RoHS3 compliant
Solid state reliability with no mechanical wear
Robust design for high temperature and harsh environments
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial equipment.
Application Areas
High-voltage, high-power applications
Industrial power electronics
Renewable energy systems
Electric vehicle propulsion
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades may become available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power, high-voltage applications
Reliable and rugged design for harsh environments
Wide operating temperature range for versatile use
Fast switching speed and low gate charge for efficient power conversion
RoHS3 compliant for environmentally-conscious design