Manufacturer Part Number
IXTH50N20
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
Supports continuous drain current up to 50A at 25°C
Low on-resistance of 45mOhm at 25A, 10V
High drain-to-source voltage rating of 200V
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 220nC at 10V
High power dissipation capability of 300W at 25°C
Product Advantages
Excellent power handling and efficiency
Reliable operation in high-power applications
Compact TO-247 package with through-hole mounting
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 45mOhm at 25A, 10V
Continuous drain current (Id): 50A at 25°C
Input capacitance (Ciss): 4600pF at 25V
Power dissipation (Pd): 300W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Designed for use in a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
Currently in active production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Exceptional power handling and efficiency
Reliable operation in high-temperature and high-current conditions
Compact and easy-to-mount TO-247 package
Suitable for a wide range of power electronics applications
RoHS3 compliance for use in environmentally-conscious designs
