IXTH50N20 - IXYS

Manufacturer Part Number

IXTH50N20

Manufacturer

IXYS Corporation

Introduction

High-power N-channel MOSFET transistor

Product Features and Performance

Supports continuous drain current up to 50A at 25°C

Low on-resistance of 45mOhm at 25A, 10V

High drain-to-source voltage rating of 200V

Wide operating temperature range of -55°C to 150°C

Fast switching with low gate charge of 220nC at 10V

High power dissipation capability of 300W at 25°C

Product Advantages

Excellent power handling and efficiency

Reliable operation in high-power applications

Compact TO-247 package with through-hole mounting

Key Technical Parameters

Drain-to-source voltage (Vdss): 200V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 45mOhm at 25A, 10V

Continuous drain current (Id): 50A at 25°C

Input capacitance (Ciss): 4600pF at 25V

Power dissipation (Pd): 300W at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability and safety-critical applications

Compatibility

Designed for use in a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and automotive power electronics

Product Lifecycle

Currently in active production

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Exceptional power handling and efficiency

Reliable operation in high-temperature and high-current conditions

Compact and easy-to-mount TO-247 package

Suitable for a wide range of power electronics applications

RoHS3 compliance for use in environmentally-conscious designs