Manufacturer Part Number
IXTH4N150
Manufacturer
IXYS Corporation
Introduction
High voltage, high power N-channel MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 150°C (TJ)
High drain-to-source voltage of 1500V
Low on-resistance of 6Ω @ 2A, 10V
High continuous drain current of 4A @ 25°C (Tc)
Low input capacitance of 1576pF @ 25V
High power dissipation of 280W (Tc)
N-channel MOSFET technology
Product Advantages
Suitable for high voltage, high power applications
Excellent thermal and electrical performance
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 6Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C (Tc)
Input Capacitance (Ciss): 1576pF @ 25V
Power Dissipation (Pd): 280W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high reliability applications
Compatibility
Through-hole mounting (TO-247 package)
Application Areas
High voltage, high power switching applications
Industrial controls
Power supplies
Motor drives
Welding equipment
Lighting ballasts
Product Lifecycle
Still in active production
Replacements and upgrades may be available
Several Key Reasons to Choose This Product
Excellent electrical and thermal performance for high voltage, high power applications
Reliable and robust design for industrial and high-reliability uses
Wide operating temperature range
RoHS3 compliance for environmental responsibility
