Manufacturer Part Number
IXTH3N120
Manufacturer
IXYS Corporation
Introduction
The IXTH3N120 is a high-voltage N-channel MOSFET transistor suitable for a wide range of power electronics applications.
Product Features and Performance
High drain-to-source breakdown voltage of 1200V
Low on-resistance of 4.5 ohms at 500mA, 10V
Continuous drain current of 3A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge of 39nC at 10V
Product Advantages
Robust and reliable performance
Suitable for high-voltage, high-power applications
Efficient power conversion and control
Compact and space-saving design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.5 ohms @ 500mA, 10V
Continuous Drain Current (Id): 3A @ 25°C
Input Capacitance (Ciss): 1300pF @ 25V
Power Dissipation (Tc): 200W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature, high-voltage, and high-power applications
Robust and reliable construction
Compatibility
Compatible with a wide range of power electronics systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial automation and control
Renewable energy systems
Product Lifecycle
The IXTH3N120 is an active and widely-used product in the IXYS portfolio.
Replacement or upgrade options may be available from IXYS or other manufacturers.
Key Reasons to Choose This Product
Exceptional high-voltage and high-power performance
Efficient power conversion and control
Robust and reliable design for demanding applications
Compact and space-saving package
Compatibility with a wide range of power electronics systems
IXTH35N30IXYS / Littelfuse