Manufacturer Part Number
IXTH3N150
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-power N-channel MOSFET in a TO-247 package.
Product Features and Performance
Drain to Source Voltage (Vdss) of 1500 V
Continuous Drain Current (Id) of 3 A at 25°C
Low On-state Resistance (Rds(on)) of 7.3 Ω at 1.5 A, 10 V
Wide operating temperature range of -55°C to 150°C
High Input Capacitance (Ciss) of 1375 pF at 25 V
Maximum Power Dissipation of 250 W at Tc
Product Advantages
High voltage handling capability
Low on-state resistance for efficient power conversion
Robust design for challenging operating conditions
Key Technical Parameters
N-channel MOSFET technology
Vgs(th) (Max) of 5 V at 250 A
Drive Voltage (Max Rds On, Min Rds On) of 10 V
Gate Charge (Qg) (Max) of 38.6 nC at 10 V
Quality and Safety Features
RoHS3 compliant
TO-247 package
Compatibility
Compatible with various power electronics applications
Application Areas
Power conversion
Motor drives
Industrial equipment
Renewable energy systems
Product Lifecycle
This product is currently available.
Replacements or upgrades may be available in the future.
Several Key Reasons to Choose This Product
High voltage capability for demanding applications
Low on-state resistance for efficient power conversion
Wide operating temperature range for reliability
Robust design to withstand challenging conditions
RoHS3 compliance for environmental responsibility
