Manufacturer Part Number
IXTH30N60P
Manufacturer
IXYS Corporation
Introduction
High voltage, high current N-channel MOSFET
Product Features and Performance
Suitable for high power switching applications
Excellent on-state resistance and fast switching performance
Capable of handling high voltages and currents
Product Advantages
Low on-state resistance for high efficiency
Fast switching speed for high-frequency operations
Robust design for reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Maximum Gate-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 240 mΩ @ 15 A, 10 V
Continuous Drain Current (Id): 30 A @ 25°C
Input Capacitance (Ciss): 5050 pF @ 25 V
Power Dissipation (Tc): 540 W
Quality and Safety Features
ROHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
TO-247 (IXTH) package
Through-hole mounting
Application Areas
High power switching applications
Industrial, automotive, and power electronics systems
Product Lifecycle
Current production model, no known discontinuation plans
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design for demanding applications
Suitable for high voltage and high current operations
Fast switching capability for high-frequency circuits
Well-established and reputable manufacturer (IXYS Corporation)