Manufacturer Part Number
IXTH260N055T2
Manufacturer
IXYS Corporation
Introduction
High power N-channel MOSFET with trench technology
Product Features and Performance
Drain to Source Voltage (Vdss) up to 55V
Continuous Drain Current (Id) up to 260A at 25°C
On-State Resistance (Rds(on)) as low as 3.3mΩ
High power dissipation capability up to 480W at 25°C
Wide operating temperature range from -55°C to 175°C
Fast switching speed and low gate charge
Product Advantages
Improved conduction and switching performance
Increased power density and efficiency
Suitable for high current, high power applications
Robust design for reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Gate to Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 3.3mΩ @ 50A, 10V
Continuous Drain Current (Id): 260A at 25°C
Input Capacitance (Ciss): 10800pF @ 25V
Gate Charge (Qg): 140nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-247 package for efficient heat dissipation
Trench MOSFET technology for improved performance
Compatibility
Suitable for a wide range of high power, high current applications
Application Areas
Motor drives
Power supplies
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable design for demanding applications
Wide operating temperature range
Proven trench MOSFET technology
RoHS3 compliance for environmental sustainability
