IXTH21N50 - IXYS

Manufacturer Part Number

IXTH21N50

Manufacturer

IXYS Corporation

Introduction

The IXTH21N50 is a high-performance N-Channel power MOSFET from IXYS Corporation. It is part of the MegaMOS series and designed for various power conversion and control applications.

Product Features and Performance

500V drain-to-source voltage rating

21A continuous drain current at 25°C

250mΩ maximum on-resistance at 10.5A, 10V

4200pF maximum input capacitance at 25V

300W maximum power dissipation at Tc

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust and reliable performance

Excellent power handling capability

Low on-resistance for high efficiency

Suitable for high-voltage, high-current applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 500V

Gate-to-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 4V @ 250A

On-Resistance (Rds(on)): 250mΩ @ 10.5A, 10V

Input Capacitance (Ciss): 4200pF @ 25V

Power Dissipation (Tc): 300W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high-quality standards

Compatibility

Compatible with a wide range of power electronic circuits and systems

Application Areas

Power supplies

Motor drives

Inverters

Switched-mode power supplies

Industrial and consumer electronics

Product Lifecycle

The IXTH21N50 is an active and widely available product from IXYS Corporation.

Replacement and upgrade options are available from IXYS.

Key Reasons to Choose This Product

Robust and reliable performance for high-voltage, high-current applications

Excellent power handling capability and efficiency due to low on-resistance

Wide operating temperature range for versatile use

Compatibility with a broad range of power electronic circuits and systems

Availability of replacement and upgrade options from the manufacturer