Manufacturer Part Number
IXTH20N60
Manufacturer
IXYS Corporation
Introduction
High-power, high-voltage N-channel MOSFET transistor
Product Features and Performance
600V drain-to-source voltage
20A continuous drain current
350mΩ maximum on-resistance
4500pF maximum input capacitance
300W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust and reliable design
Efficient power handling capability
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-source voltage: 600V
Maximum gate-to-source voltage: ±20V
On-resistance: 350mΩ max @ 10A, 10V
Drain current: 20A continuous @ 25°C
Input capacitance: 4500pF max @ 25V
Power dissipation: 300W max @ Tc
Quality and Safety Features
RoHS3 compliant
TO-247 (IXTH) package
Compatibility
Compatible with a variety of high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Proven, reliable design
Excellent power handling capability
Wide operating temperature range
Efficient power switching performance
Suitable for high-voltage, high-current applications
IXTH24N45IXYS / Littelfuse