Manufacturer Part Number
IXTH16N10D2
Manufacturer
IXYS Corporation
Introduction
High voltage, high power density N-channel depletion mode MOSFET
Product Features and Performance
Designed for high power applications
Capable of handling up to 830W of power dissipation
Operates over a wide temperature range of -55°C to 175°C
Product Advantages
Low on-resistance of 64mΩ at 8A, 0V
High voltage rating of 100V
High continuous drain current of 16A at 25°C
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 64mΩ at 8A, 0V
Continuous Drain Current (Id): 16A at 25°C
Input Capacitance (Ciss): 5700pF at 25V
Gate Charge (Qg): 225nC at 5V
Quality and Safety Features
RoHS3 compliant
TO-247 (IXTH) package for high power and thermal performance
Compatibility
Suitable for high power, high voltage applications
Application Areas
Suitable for use in industrial, automotive, and power supply applications
Product Lifecycle
This product is still in active production and available for purchase
Key Reasons to Choose This Product
Robust design for high power and high voltage applications
Low on-resistance for improved efficiency
Wide operating temperature range for versatile use
High current handling capability
Proven reliability and performance
IXTH15P15AIXYS / LittelfuseIGBT Module