Manufacturer Part Number
IXTH1N100
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-power N-channel MOSFET in a TO-247 package
Product Features and Performance
Very low on-resistance of 11 Ohm @ 1A, 10V
High drain-source voltage rating of 1000V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 480 pF @ 25V
Capable of handling high power dissipation up to 60W
Product Advantages
Excellent power handling capability
Efficient power conversion
Reliable performance in high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 1.5A @ 25°C
On-Resistance (Rds(on)): 11 Ohm @ 1A, 10V
Input Capacitance (Ciss): 480 pF @ 25V
Power Dissipation (Tc): 60W
Quality and Safety Features
RoHS3 compliant
Designed for reliable performance in harsh environments
Compatibility
Through-hole mounting in a TO-247 package
Application Areas
High-voltage, high-power switching applications
Power supplies, converters, and inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable performance in high-voltage, high-power applications
Wide operating temperature range
RoHS3 compliance for environmental safety
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