Manufacturer Part Number
IXTH200N10T
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET in TO-247 package
Product Features and Performance
Trench MOSFET technology
High drain current capacity up to 200A
Low on-resistance of 5.5 mΩ
Wide operating temperature range of -55°C to 175°C
High input capacitance of 9400 pF
High power dissipation of 550W
Product Advantages
Excellent thermal and electrical performance
Robust and reliable design
High efficiency and low power losses
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 200A
On-Resistance (Rds(on)): 5.5 mΩ
Input Capacitance (Ciss): 9400 pF
Power Dissipation (Tc): 550W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature environments
Compatibility
Compatible with various high-power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in production
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
Excellent thermal and electrical performance
Robust and reliable design
High efficiency and low power losses
Suitable for high-current, high-power applications
Wide operating temperature range
RoHS3 compliance for safety and environmental considerations