Manufacturer Part Number
IXTH1N250
Manufacturer
IXYS Corporation
Introduction
High-voltage, low-on-resistance N-channel MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss): 2500 V
On-Resistance (Rds(on)): 40 Ω @ 750 mA, 10 V
Continuous Drain Current (Id): 1.5 A @ 25°C (Tc)
Input Capacitance (Ciss): 1660 pF @ 25 V
Gate Threshold Voltage (Vgs(th)): 4 V @ 250 A
Gate Charge (Qg): 41 nC @ 10 V
Product Advantages
Suitable for high-voltage, high-power applications
Low on-resistance for efficient power conversion
Fast switching performance
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
FET Type: N-Channel
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 compliant
Compatibility
TO-247-3 package
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-voltage, high-power industrial applications
Product Lifecycle
This product is an active, currently available device from IXYS Corporation.
Several Key Reasons to Choose This Product
High voltage rating of 2500 V for use in high-power applications
Low on-resistance for efficient power conversion
Fast switching performance for improved system efficiency
Proven reliability and quality from a reputable manufacturer, IXYS Corporation
IXTH22P15IXYS / Littelfuse