Manufacturer Part Number
IXTH26P20P
Manufacturer
IXYS Corporation
Introduction
This is a P-channel power MOSFET transistor from IXYS Corporation.
Product Features and Performance
High voltage rating of 200V
Continuous drain current of 26A at 25°C case temperature
On-resistance of 170mOhm at 13A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2740pF at 25V
High power dissipation capability of 300W at case temperature
Product Advantages
Suitable for high voltage, high current applications
Low on-resistance for low conduction losses
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 170mOhm
Continuous Drain Current (Id): 26A
Power Dissipation (Pd): 300W
Quality and Safety Features
RoHS3 compliant
TO-247 package for reliable thermal management
Compatibility
This MOSFET is compatible with various high-power, high-voltage applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-side or low-side switching
Industrial and automotive electronics
Product Lifecycle
This MOSFET is an active and widely used product. Replacements and upgrades may be available from IXYS or other manufacturers.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust design for reliable operation in harsh environments
Compatible with a wide range of high-power applications
IXTH24N50QIXYS / Littelfuse