Manufacturer Part Number
IXTH36P10
Manufacturer
IXYS Corporation
Introduction
This is a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) from IXYS Corporation.
Product Features and Performance
100V drain-to-source voltage
36A continuous drain current at 25°C
75mOhm maximum on-resistance at 18A, 10V
-55°C to 150°C operating temperature range
2800pF maximum input capacitance at 25V
180W maximum power dissipation at 25°C
95nC maximum gate charge at 10V
Product Advantages
High current and power handling capability
Low on-resistance for efficient performance
Wide operating temperature range
Robust and reliable construction
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 75mOhm @ 18A, 10V
Continuous Drain Current (Id): 36A @ 25°C
Input Capacitance (Ciss): 2800pF @ 25V
Power Dissipation (Pd): 180W @ 25°C
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
This MOSFET is compatible with various electronic circuits and power electronics applications.
Application Areas
Power supplies
Motor drives
Industrial automation
Inverters and converters
General power switching
Product Lifecycle
The IXTH36P10 is an active and available product from IXYS Corporation. Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
High current and power handling capability
Low on-resistance for efficient performance
Wide operating temperature range
Robust and reliable construction
RoHS3 compliance for environmental responsibility
