Manufacturer Part Number
IXTH50P085
Manufacturer
IXYS Corporation
Introduction
High-performance P-channel MOSFET for power electronics applications
Product Features and Performance
Drain to Source Voltage (Vdss) up to 85V
Continuous Drain Current (Id) up to 50A at 25°C
Low On-Resistance (Rds(on)) of 55mOhm at 25A, 10V
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Capability
High Input Capacitance (Ciss) of 4200pF at 25V
High Power Dissipation of 300W at Tc
Product Advantages
Excellent power handling capability
Superior thermal performance
Reliable operation in harsh environments
Efficient power conversion and control
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 85V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 55mOhm @ 25A, 10V
Continuous Drain Current (Id): 50A at 25°C
Input Capacitance (Ciss): 4200pF at 25V
Power Dissipation (Tc): 300W
Quality and Safety Features
Robust TO-247 package design
Adherence to IXYS quality standards
Overcurrent and overtemperature protection
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters
Application Areas
Industrial motor controls
Power supplies and inverters
Electric vehicle powertrains
Renewable energy systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Replacement or upgrade options are available from IXYS and other manufacturers
Key Reasons to Choose This Product
High power handling and efficiency
Excellent thermal management
Reliable operation in demanding environments
Compatibility with a wide range of power electronics applications
Availability of technical support and customer service from IXYS
