Manufacturer Part Number
IXTH6N80A
Manufacturer
IXYS Corporation
Introduction
High-voltage MOSFET transistor designed for power switching and amplifier applications
Product Features and Performance
800V drain-source voltage rating
6A continuous drain current at 25°C
4Ω maximum on-resistance at 3A, 10V
2800pF maximum input capacitance at 25V
130nC maximum gate charge at 10V
-55°C to 150°C operating temperature range
Product Advantages
Robust and reliable performance
Suitable for high-voltage, high-power applications
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 6A at 25°C
On-Resistance (Rds(on)): 1.4Ω at 3A, 10V
Input Capacitance (Ciss): 2800pF at 25V
Gate Charge (Qg): 130nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-247 package for reliable thermal management
Compatibility
Suitable for a variety of power switching and amplifier applications
Application Areas
Power supplies
Motor drives
Inverters
Amplifiers
Industrial and consumer electronics
Product Lifecycle
Current production status, no information on discontinuation
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust and reliable performance
Suitable for a variety of high-power applications
