Manufacturer Part Number
IXTH76P10T
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
100V Drain-Source Voltage
76A Continuous Drain Current
25mΩ On-Resistance
13,700pF Input Capacitance
298W Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±15V
Rds(on) (Max): 25mΩ @ 38A, 10V
Id (Continuous): 76A
Ciss (Max): 13,700pF @ 25V
Pd (Max): 298W
Quality and Safety Features
ROHS3 Compliant
TO-247 Package
Compatibility
Through-hole mounting
Application Areas
Suitable for high-power switching applications, such as motor drives, power supplies, and industrial controls.
Product Lifecycle
Current production, no discontinuation planned
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Proven IXYS technology and quality
