Manufacturer Part Number
IXTK100N25P
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
250V drain-source voltage
100A continuous drain current
27mΩ maximum on-resistance
Low gate charge for high-speed switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Robust design for reliable operation
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 27mΩ
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 6300pF
Power Dissipation (Tc): 600W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation
Compatibility
Through-hole mounting in TO-264 (IXTK) package
Application Areas
Power supplies
Motor drives
Inverters
Solar power systems
Industrial controls
Product Lifecycle
Actively available
Replacements and upgrades may be available
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range for rugged applications
Optimized for high-speed switching
Reliable and robust design
IXTH80N65X2IXYSMOSFET N-CH 650V 80A TO247