Manufacturer Part Number
IXTH96N20P
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET with high power density and low on-resistance.
Product Features and Performance
High drain-source voltage up to 200V
Low on-resistance down to 24mOhm
High continuous drain current up to 96A
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge
Product Advantages
Excellent power density and efficiency
Reliable operation in high-power applications
Suitable for various power conversion and control systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 24mOhm
Continuous Drain Current (Id): 96A
Input Capacitance (Ciss): 4800pF
Power Dissipation (Pd): 600W
Quality and Safety Features
RoHS3 compliant
Sealed in a durable TO-247 (IXTH) package
Compatibility
Suitable for various power conversion and control applications, such as:
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Application Areas
High-power industrial electronics
Electric vehicles
Renewable energy systems
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is an actively supported and available MOSFET from IXYS Corporation. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
High power density and efficiency for high-power applications
Exceptional thermal performance with a wide operating temperature range
Robust and reliable design in a durable TO-247 package
Versatile compatibility with various power conversion and control systems
Backed by the expertise and support of IXYS Corporation, a leading manufacturer of power semiconductors.
