Manufacturer Part Number
IXTK110N20L2
Manufacturer
IXYS Corporation
Introduction
High-power N-channel metal-oxide-semiconductor field-effect transistor (MOSFET)
Product Features and Performance
High voltage rating of 200V
Continuous drain current of 110A at 25°C
Low on-resistance of 24mOhm
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 960W
Product Advantages
Excellent performance in high-power applications
Robust design for reliable operation
Efficient heat dissipation
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 24mOhm
Continuous drain current (Id): 110A
Input capacitance (Ciss): 23000pF
Power dissipation (Pd): 960W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
High-power motor drives
Switched-mode power supplies
Inverters and converters
Industrial automation and control systems
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Excellent performance in high-power applications
Robust and reliable design
Efficient heat dissipation
Wide operating temperature range
RoHS3 compliance for environmental friendliness