Manufacturer Part Number
IXTK180N15
Manufacturer
IXYS Corporation
Introduction
High-power N-channel MOSFET transistor designed for high-current, high-voltage switching applications.
Product Features and Performance
150V drain-to-source voltage rating
180A continuous drain current at 25°C
9mΩ maximum on-resistance at 500mA, 10V
7000pF maximum input capacitance at 25V
730W maximum power dissipation at 25°C baseplate temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in high-power, high-voltage switching applications
Low on-resistance for efficient power conversion
High current handling capability
Robust design for reliable operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 150V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 9mΩ @ 500mA, 10V
Continuous drain current (Id): 180A @ 25°C
Input capacitance (Ciss): 7000pF @ 25V
Power dissipation (Pd): 730W @ 25°C baseplate
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of high-power, high-voltage switching applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Welding equipment
Solar inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade products available if needed
Key Reasons to Choose This Product
Excellent performance in high-power, high-voltage switching applications
Low on-resistance for efficient power conversion
High current handling capability
Robust design for reliable operation
Compliance with RoHS3 regulations for environmental responsibility
Availability of replacement or upgrade products if needed
