Manufacturer Part Number
IXTK22N100L
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-current N-channel MOSFET transistor for power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 1000V
Continuous Drain Current (Id) of 22A at 25°C
On-state Resistance (Rds(on)) of 600mΩ at 11A, 20V
Input Capacitance (Ciss) of 7050pF at 25V
Power Dissipation (Pd) of 700W at 25°C
Product Advantages
Robust, high-voltage and high-current capabilities
Low on-state resistance for low conduction losses
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
N-channel MOSFET technology
Gate-Source Voltage (Vgs) range of ±30V
Gate Threshold Voltage (Vgs(th)) of 5V at 250A
Gate Charge (Qg) of 270nC at 15V
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current product, no indication of discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range for reliability
RoHS compliance for environmental responsibility
