Manufacturer Part Number
IXTK200N10P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET suitable for high-power switching applications.
Product Features and Performance
High power density and low on-resistance
Able to handle continuous drain current up to 200A at 25°C case temperature
Low gate charge and input capacitance for efficient switching
Withstands up to 100V drain-to-source voltage
Operating temperature range of -55°C to 175°C
Product Advantages
Efficient and reliable power switching
Compact design with high power handling capability
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.5mΩ @ 100A, 10V
Continuous Drain Current (Id): 200A @ 25°C case temperature
Input Capacitance (Ciss): 7600pF @ 25V
Power Dissipation (Tc): 800W
Quality and Safety Features
RoHS3 compliant
TO-264 (IXTK) package for reliable operation and thermal management
Compatibility
Compatible with a wide range of high-power switching applications
Application Areas
Motor control
Power supplies
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
Replacement parts and upgrades available
Key Reasons to Choose This Product
High power density and efficiency
Reliable and robust design for demanding applications
Broad operating temperature range
Compact and space-saving package
Suitable for a variety of high-power switching needs
