Manufacturer Part Number
IXTK200N10L2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power switching and amplification applications
Product Features and Performance
Excellent on-state performance with low on-resistance
High current handling capability up to 200A (at 25°C)
Fast switching speed and low gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and management
Reliable and durable performance
Suitable for various high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 11mΩ @ 100A, 10V
Continuous Drain Current (Id): 200A (at 25°C)
Input Capacitance (Ciss): 23,000pF @ 25V
Power Dissipation (Tc): 1,040W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Compatible with various high-power electronics and power conversion systems
Application Areas
High-power switching and amplification applications
Power converters, motor drives, and industrial control systems
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and durable performance
Wide operating temperature range
Suitable for various high-power applications