Manufacturer Part Number
IXTK21N100
Manufacturer
IXYS Corporation
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
Drain-to-source voltage up to 1000V
On-resistance as low as 550mΩ
Continuous drain current up to 21A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 8400pF
High power dissipation capability of 500W
Product Advantages
Excellent performance in high-voltage, high-current applications
High reliability and ruggedness
Efficient heat dissipation and low on-state losses
Key Technical Parameters
Drain-to-source voltage: 1000V
Gate-to-source voltage: ±20V
On-resistance: 550mΩ
Continuous drain current: 21A
Input capacitance: 8400pF
Power dissipation: 500W
Quality and Safety Features
RoHS3 compliant
Qualified for harsh environments
Compatibility
Through-hole mounting in TO-264 (IXTK) package
Application Areas
High-voltage power supplies
Motor drives
Inverters
Welding equipment
Industrial control systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Exceptional high-voltage and high-current performance
Low on-state losses and efficient heat dissipation
Reliable and rugged design for harsh environments
Wide operating temperature range
Compatibility with standard through-hole mounting
