Manufacturer Part Number
IXTK250N10
Manufacturer
IXYS Corporation
Introduction
The IXTK250N10 is a discrete power MOSFET transistor designed for high-power, high-frequency switching applications.
Product Features and Performance
N-channel MOSFET with a 100V drain-source voltage rating
Extremely low on-resistance of 5mOhm at 90A and 10V
Continuous drain current of 250A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Very low input capacitance of 12,700pF at 25V
High power dissipation capability of 730W at case temperature
Product Advantages
Highly efficient switching performance
Excellent thermal management
Robust and reliable operation
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5mOhm @ 90A, 10V
Continuous Drain Current (Id): 250A @ 25°C
Input Capacitance (Ciss): 12,700pF @ 25V
Power Dissipation (Tc): 730W
Quality and Safety Features
Manufactured using reliable MOSFET technology
Robust TO-264 package for high-power applications
Designed for safe and reliable operation
Compatibility
Compatible with a wide range of high-power, high-frequency applications
Application Areas
Power supplies
Motor drives
Industrial automation
Renewable energy systems
Welding equipment
Transportation systems
Product Lifecycle
The IXTK250N10 is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Industry-leading low on-resistance
Robust and reliable performance
Suitable for a wide range of high-power, high-frequency applications
Extensive technical parameters and safety features
Ongoing product availability and support from IXYS Corporation
