IXTK120N25 - IXYS

Manufacturer Part Number

IXTK120N25

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel power MOSFET with low on-resistance and high current capability.

Product Features and Performance

High current capability up to 120A continuous drain current at 25°C

Low on-resistance of 20mΩ at 500mA, 10V

High blocking voltage of 250V drain-to-source

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 360nC at 10V

Product Advantages

Excellent efficiency and power density

Robust and reliable performance

Suitable for high-power switching applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 250V

Maximum Gate-to-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id) @ 25°C: 120A

On-Resistance (Rds(on)) @ 500mA, 10V: 20mΩ

Input Capacitance (Ciss) @ 25V: 7700pF

Power Dissipation (Tc) @ 25°C: 730W

Quality and Safety Features

ROHS3 compliant

Suitable for high-reliability applications

Compatibility

Through-hole mounting in TO-264 (IXTK) package

Application Areas

High-power switching applications such as motor drives, power supplies, and inverters

Product Lifecycle

This product is not nearing discontinuation, and there are no immediate plans for replacements or upgrades.

Key Reasons to Choose This Product

Excellent efficiency and power density for high-power applications

Robust and reliable performance with wide operating temperature range

Fast switching speed and low gate charge for improved system efficiency

Suitable for a variety of high-power switching applications