Manufacturer Part Number
IXTH80N65X2
Manufacturer
IXYS Corporation
Introduction
The IXTH80N65X2 is a high-performance N-channel MOSFET device from IXYS Corporation, a leading semiconductor manufacturer.
Product Features and Performance
Ultra-low on-state resistance (RDS(on) of 40 mΩ @ 40 A, 10 V)
High drain-to-source voltage (VDS) of 650 V
Wide operating temperature range of -55°C to 150°C
Fast switching capabilities
High power dissipation of 890 W (at TC)
Product Advantages
Excellent efficiency and low conduction losses
Reliable and robust design
Suitable for high-voltage, high-current switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 650 V
Gate-to-Source Voltage (VGS): ±30 V
Continuous Drain Current (ID): 80 A (at TC)
On-State Resistance (RDS(on)): 40 mΩ (at 40 A, 10 V)
Input Capacitance (Ciss): 7753 pF (at 25 V)
Gate Charge (Qg): 144 nC (at 10 V)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Suitable for safety-critical applications
Compatibility
The IXTH80N65X2 is a direct replacement for various high-voltage, high-current MOSFET devices in power electronics applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Industrial electronics
Automotive electronics
Product Lifecycle
The IXTH80N65X2 is an actively supported product in IXYS Corporation's portfolio. Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and low conduction losses
High voltage and current handling capabilities
Wide operating temperature range
Fast switching performance
Reliable and robust design
RoHS3 compliance for use in safety-critical applications
