Manufacturer Part Number
IXTH67N10
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET in TO-247 package
Product Features and Performance
Supports high drain-source voltage up to 100V
Low on-resistance of 25mOhm at 33.5A, 10V
Wide operating temperature range of -55°C to 150°C
High continuous drain current of 67A at 25°C
Fast switching with low input capacitance of 4500pF at 25V
High power dissipation of 300W at case temperature
Product Advantages
Excellent power handling capability
Efficient power conversion and low conduction losses
Wide temperature range for demanding applications
Reliable performance in high-power circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25mOhm
Continuous Drain Current (Id): 67A
Input Capacitance (Ciss): 4500pF
Power Dissipation (Pd): 300W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting in TO-247 package
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
High-power switching applications
Motor drives
Power conversion and inversion
Welding equipment
Industrial automation and control
Product Lifecycle
Active product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating temperature range
Reliable and robust performance
RoHS compliance for industrial and commercial use
Compatibility with standard gate drive circuits
