Manufacturer Part Number
IXTH60N20L2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor in a TO-247 package for power switching applications.
Product Features and Performance
High drain-source voltage rating of 200V
Low on-resistance of 45mΩ @ 30A, 10V
Continuous drain current rating of 60A at 25°C
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 540W
Product Advantages
Efficient power switching performance
High reliability and ruggedness
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 45mΩ @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
Compatible with various power electronics and high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Inverters
Servo amplifiers
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
High-performance power switching capabilities
Efficient power handling and low on-resistance
Wide operating temperature range for reliability
Rugged and durable construction for industrial applications
RoHS compliance for environmental responsibility
