Manufacturer Part Number
IXTH52N65X
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET
Product Features and Performance
Ultra-low on-resistance
High blocking voltage capability
High current handling capability
Fast switching speed
Reliable and stable performance
Product Advantages
Excellent efficiency and thermal management
Suitable for high-power switching applications
Robust and durable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
Current Continuous Drain (Id) @ 25°C: 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and stable performance under wide temperature range (-55°C ~ 150°C)
Compatibility
TO-247 (IXTH) package
Suitable for various high-power switching applications
Application Areas
Power supplies
Inverters
Motor drives
Welding equipment
Industrial automation
Product Lifecycle
Currently available
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent efficiency and thermal management
High blocking voltage and current handling capability
Fast switching speed and reliable performance
Robust and durable design
Suitable for a wide range of high-power switching applications
