Manufacturer Part Number
IXFB40N110P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with high voltage and current capabilities
Product Features and Performance
Drain-to-source voltage up to 1100V
Continuous drain current up to 40A at 25°C
Low on-resistance of 260mΩ @ 20A, 10V
High power dissipation of 1250W at case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching capability with low gate charge of 310nC @ 10V
Product Advantages
Excellent performance in high-power, high-voltage applications
Robust design for reliable operation
Efficient thermal management through high power dissipation
Versatile in various industrial and power electronics applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 1100V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 260mΩ @ 20A, 10V
Continuous drain current (Id): 40A at 25°C
Input capacitance (Ciss): 19000pF @ 25V
Gate charge (Qg): 310nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial applications
Adherence to safety standards for high-voltage transistors
Compatibility
Compatible with various power electronics and industrial control systems
Application Areas
High-voltage, high-power switching applications
Motor drives and control systems
Power supplies and converters
Inverters and renewable energy systems
Industrial and commercial equipment
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Exceptional voltage and current handling capabilities
Efficient thermal management for high-power operation
Reliable and robust design for industrial applications
Versatile in a wide range of power electronics and control systems
Compliance with RoHS3 standards for environmental responsibility
IXFA7N80PIXYSMOSFET N-CH 800V 7A TO263