Manufacturer Part Number
IXFB80N50Q2
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor designed for power switching applications.
Product Features and Performance
N-channel MOSFET with 500V drain-source voltage rating
Optimized for high-efficiency power conversion
Low on-resistance and low gate charge for fast switching
High continuous drain current of 80A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Fast switching and high efficiency
Robust and reliable performance
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 60mΩ @ 500mA, 10V
Continuous drain current (ID): 80A @ 25°C
Input capacitance (Ciss): 15,000pF @ 25V
Power dissipation (Pd): 960W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product offering, no plans for discontinuation
Replacement or upgrade parts available as needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Fast, reliable switching performance
Wide operating temperature range
RoHS compliance for industrial and consumer applications
Readily available and well-supported by the manufacturer
