Manufacturer Part Number
IXFB170N30P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and fast switching capabilities.
Product Features and Performance
Extremely low on-resistance of 18 mΩ
High continuous drain current of 170 A at 25°C
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 300 V
Fast switching capability with low gate charge of 258 nC
High power dissipation of 1250 W at case temperature
Product Advantages
Excellent efficiency and low power losses
Robust design with high reliability
Suitable for high-power and high-frequency applications
Easy to integrate and compatible with various driver circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 18 mΩ @ 85 A, 10 V
Continuous Drain Current (Id): 170 A @ 25°C
Input Capacitance (Ciss): 20,000 pF @ 25 V
Gate Charge (Qg): 258 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Tested and qualified for reliable performance
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial equipment
Renewable energy systems
Electric vehicles
Uninterruptible power supplies (UPS)
Welding equipment
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement options and upgrades may be available from the manufacturer.
Several Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High continuous drain current and power dissipation
Wide operating temperature range for versatile applications
Fast switching capability for high-frequency operation
Robust design and high reliability
Easy integration and compatibility with various driver circuits
