Manufacturer Part Number
IXFB50N80Q2
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET featuring low on-resistance and high voltage capability for power electronics applications.
Product Features and Performance
800V drain-source voltage rating
50A continuous drain current at 25°C case temperature
Low on-resistance of 160mΩ @ 500mA, 10V
High power dissipation of 1135W at 25°C case temperature
Fast switching performance
Product Advantages
Excellent power handling capability
Low conduction losses
Robust design for reliability
Suitable for high-voltage, high-current power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 160mΩ @ 500mA, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 7200pF @ 25V
Power Dissipation (Pd): 1135W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-reliability standards
Compatibility
TO-264-3, TO-264AA package
Compatible with a wide range of power electronic circuits and systems
Application Areas
High-voltage, high-current power conversion
Motor drives
Switch-mode power supplies
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from IXYS
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design
Suitable for high-voltage, high-current applications
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmental compatibility
IXFC15N80QIXYSMOSFET N-CH 800V 13A ISOPLUS220