Manufacturer Part Number
IXFB100N50P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET with low on-resistance and high-speed switching capabilities.
Product Features and Performance
Drain-to-source voltage (Vdss) of 500V
Maximum gate-to-source voltage (Vgs) of ±30V
Very low on-resistance (Rds(on)) of 49mΩ @ 50A, 10V
Continuous drain current (Id) of 100A at 25°C (case temperature)
Input capacitance (Ciss) of 20,000pF @ 25V
Maximum power dissipation of 1,890W at 25°C (case temperature)
Fast switching characteristics with low gate charge (Qg) of 240nC @ 10V
Product Advantages
Excellent performance-to-cost ratio
Robust and reliable design for demanding applications
High power density and efficiency
Suitable for various power conversion and control applications
Key Technical Parameters
N-channel MOSFET technology
Threshold voltage (Vgs(th)) of 5V @ 8mA
Optimized for 10V drive voltage
Through-hole TO-264 package
Quality and Safety Features
ROHS3 compliant
Stringent quality control and testing
Compatibility
Widely used in industrial, consumer, and automotive applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power conditioning equipment
Industrial automation and control systems
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
Exceptional performance-to-cost ratio
Reliable and robust design for demanding applications
High power density and efficiency
Suitable for a wide range of power conversion and control applications
Readily available and compatible with existing systems
