Manufacturer Part Number
IXFA90N20X3
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Power Dissipation (Max): 390W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
High performance
Wide operating temperature range
Low on-resistance
High current capability
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Continuous Drain Current (Id): 90A
On-resistance (Rds(on)): 12.8mOhm
Quality and Safety Features
RoHS3 compliant
Designed for reliable high-power applications
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
Current model, no plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent performance characteristics
High reliability and durability
Compact and efficient design
Supports a wide range of high-power applications
Competitively priced for the performance level
IXFA34N65X2IXYS CorporationMOSFET N-CH 650V 34A TO-263