Manufacturer Part Number
IXFB44N100P
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel power MOSFET with low on-resistance and high voltage rating
Product Features and Performance
Very low on-resistance of 220 mΩ
High drain-source voltage rating of 1000 V
Continuous drain current rating of 44 A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching characteristics with low gate charge of 305 nC
High power dissipation capability of 1250 W
Product Advantages
Ideal for high-voltage, high-current switching applications
Excellent performance-to-cost ratio
Robust and reliable design
Suitable for a wide range of industrial and power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000 V
Gate-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 220 mΩ @ 22 A, 10 V
Continuous Drain Current (Id): 44 A @ 25°C
Input Capacitance (Ciss): 19000 pF @ 25 V
Power Dissipation (Pd): 1250 W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Meets industry safety and quality standards
Compatibility
Suitable for a wide range of industrial and power conversion applications
Can be used as a replacement or upgrade for similar high-voltage, high-current power MOSFET devices
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation and control
Renewable energy systems
Electric vehicle power electronics
Product Lifecycle
Currently in production
No indications of discontinuation
Replacement and upgrade options available for this series
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design for demanding applications
Wide operating temperature range and high power dissipation capability
Fast switching characteristics with low gate charge
Suitable for a variety of high-voltage, high-current power conversion and control applications