Manufacturer Part Number
IXFB70N60Q2
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Designed for high-power switching applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 600V
Maximum Gate-to-Source Voltage (Vgs) of ±30V
Very low on-state resistance (Rds(on)) of 88mΩ @ 35A, 10V
Continuous Drain Current (Id) of 70A at 25°C
Input Capacitance (Ciss) of 12,000pF at 25V
Power Dissipation (Pd) of 890W at 25°C
Product Advantages
Excellent high-voltage and high-current handling capabilities
Efficient switching performance
Robust design for reliable operation
Key Technical Parameters
MOSFET technology
N-Channel FET type
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
Operating temperature range of -55°C to 150°C
Compatibility
Suitable for a variety of high-power switching applications
Application Areas
Inverters
Converters
Motor drives
Power supplies
Industrial control systems
Product Lifecycle
Active product
Replacement or upgrade options may be available
Key Reasons to Choose this Product
High power and voltage handling
Low on-state resistance for efficient operation
Robust design for reliable performance
Suitable for a wide range of high-power switching applications
