Manufacturer Part Number
IXFB30N120P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET
Part of the HiPerFET and Polar series
Product Features and Performance
High drain-source voltage of 1200V
Continuous drain current of 30A at 25°C
Low on-resistance of 350mΩ at 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 310nC at 10V
Product Advantages
Excellent energy efficiency due to low conduction and switching losses
Robust design for reliable operation in demanding applications
Versatile usage across a wide range of power electronic systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 350mΩ at 500mA, 10V
Continuous Drain Current (Id): 30A at 25°C
Input Capacitance (Ciss): 22500pF at 25V
Power Dissipation (Pd): 1250W at 25°C
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting (TO-264-3, TO-264AA package)
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in active production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent energy efficiency and low losses
Robust and reliable performance in demanding applications
Wide operating temperature range and versatile compatibility
High drain-source voltage and continuous current handling capability
Fast switching speed and low gate charge for improved system efficiency
