Manufacturer Part Number
IXFA7N100P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Capable of high-power switching and amplification
Low on-resistance for efficient power conversion
High drain-to-source voltage rating of 1000V
Product Advantages
High reliability and ruggedness
Excellent efficiency and thermal performance
Suitable for a variety of high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.9Ω @ 3.5A, 10V
Continuous Drain Current (Id): 7A @ 25°C
Input Capacitance (Ciss): 2590pF @ 25V
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Wide operating temperature range
Robust and reliable design
Suitable for demanding high-power applications
RoHS compliance for use in environmentally conscious products