Manufacturer Part Number
IXFA4N100Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor with high voltage and high current rating.
Product Features and Performance
N-Channel MOSFET with 1000V Drain-Source Voltage
Low On-Resistance of 3Ω @ 2A, 10V
Continuous Drain Current of 4A at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Low Input Capacitance of 1050pF @ 25V
Maximum Power Dissipation of 150W
Product Advantages
High voltage and high current handling capability
Low on-resistance for high efficiency
Wide temperature range for diverse applications
Small package size for space-constrained designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 1050pF @ 25V
Power Dissipation (Pd): 150W
Quality and Safety Features
RoHS3 compliant
TO-263-3 (DPak) package for surface mount
Designed for high reliability and safety
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Welding equipment
Medical equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Wide operating temperature range for diverse applications
Small package size for space-constrained designs
High reliability and safety features
Compatibility with a wide range of power electronics applications
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